Industrial furnace. Fig. 3 Schematic representation of the Kyropoulos method. Pull. Seed. Crucible. Crystal. Melt. Bottom heater. Thermal insulation. Side heater . The Czochralski (CZ) method of crystal growth was discovered in by Jan In the Kyropoulos method, pure alumina powder is placed in a crucible and. Kyropoulos method. The method was developed in and consists from smooth crystal growth at low temperature gradient. And lowered melt level.
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Sapphire crystal growing furnace heat field, crystal growing furnace with heat field and crystal growing process of crystal growing furnace. Advanced Topics on Crystal Growth. Lytvynov, and Valerian Pishchik. Example particular embodiment of the present process is as follows: The ratio of the diameter to the height may change within the interval of 3: In this modification, the decrease in temperature is combined with a simultaneous, insignificant pulling of the crystal, which results in crystal growth inside the crucible at low temperature gradients.
After 15 hours, the crystalline kydopoulos reaches 2 kg, O.
A sapphire seed of specific crystallinity is dipped into the melt on top of the die and drawn out —solidifying into sapphire in the shape of the die — typically a tube, rod or ribbon. At first, the Kyropoulos method was used for the growth of alkali halide and alkali earth metal crystals.
This method is characterized by low not higher than deg. Method for preparing synthetic sapphire by micro-pulling and shoulder-expanding at cooled center. Now it proceeds from the center to the periphery; the second maximum appears on the curve.
Kyropoulos method – consists from smooth crystal growth at low temperature gradient.
In the ensuing decades, new methods of synthesizing sapphire have emerged, and many have since been customized into proprietary processes used by manufacturers worldwide. The method was developed in and consists from smooth crystal growth at low temperature gradient.
When the crystal diameter becomes comparable to the inside diameter of the crucible, the course of the crystallization process changes and the level of melt in the crucible becomes lower. Kyropoulous Method The Czochralski method poduced material in kyropouulos crystal filaments, and Verneuil boules had basic dimensional limitations.
The furnace is held at constant temperature during growth of the crystal, which grows from the seed in three dimensions.
The process is named for Spyro Kyropoulos, who proposed the technique in as a method to grow brittle alkali halide and alkali earth metal crystals for precision optics. Typically the crucible is mfthod of tungsten or molybdenum.
The chamber is then backfilled with an inert gas to prevent the introduction of atmospheric gases into the melt during crystal growth.
In contrast with the Czochralski processthe Kyropoulos process crystallizes the entire feedstock volume into the boule. After 12 hours, open the intake valve, pressure in the furnace and the single crystal outside the same, closed cooling water system, crystal lid open, remove the sapphire single crystal, to complete the process.
Unidirectional solidified silicon ingot and manufacturing method thereof, silicon plate, substrate for solar cell and target base material for sputtering. Like the Czochralski method, the crystal grows free of any external mechanical shaping forces, and thus has few lattice defects and low internal stress. A linear temperature decrease and a constant pulling rate lead to the formation of pear-shaped crystals with somewhat elevated pore density in the nose and tail parts of the crystal.
Kyropoulos process – Wikipedia
As a rule, sapphire is grown by Kyropoulos in vacuum without rotation. The material is melted, and a thin seed of sapphire with precise orientation is dipped into the melt.
The growth process can last up to eight weeks, and requires careful, continuous power and monitoring.
Process for preparing gallium doped elementarysubstance solar energy single crystal. Retrieved from ” https: A precisely oriented seed crystal is dipped into the molten alumina.
Slight changes in the thermal flow affect the shape of the kyropoylos crystal. This growth technique is ideal for materials with low thermal conductivity and a high degree of thermal expansion, the combination of which can make crystal material vulnerable to various imperfections unless grown and cooled in a low-stress environment.
Labelle observed that cold tungsten plunged into molten alumina formed small crystalline alumina dendrites on the tungsten. The Czochralski CZ method of crystal growth was discovered in by Jan Czochralski — and was the fortunate result of an accident and kyroplulos observation.
The Kyropoulos process often referred to as the KY process for sapphire crystal growth was developed in the s in the Soviet Union. Start the vacuum system, the furnace pressure to l T3Pa. Rapid growth of this cone increases the density of macro- and microdefects, so the growth rate at this stage must be reduced. Attempts to produce extra large boules using this method have proven largely unsuccessful due to cracking during the cooling process.
The Kyropoulos method is used to grow sapphire crystals with a diameter exceeding mm and a weight larger than 80 kg. From Wikipedia, the free encyclopedia.